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STMicroelectronics STTH6010W — Discrete Semiconductors

STTH6010W Diode, 1 kV 60 A Fast Recovery, DO-247

MPNSTTH6010W
Active

STMicroelectronics STTH6010W, general-purpose fast recovery diode, 1000 V reverse voltage, 60 A average rectified current, 115 ns reverse recovery time, DO-247-2 through-hole package, tube.

$5.6500Ref. price · indicative, final on quote
STMicroelectronics STTH6010W datasheet (PDF)
PackagingDO-247-2 (Straight Leads)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STTH6010W specifications
ParameterValue
MountingThrough Hole
Voltage - DC reverse (Vr)1000 V
Voltage - forward (Vf) (Max) @ if2 V @ 60 A
Current - reverse leakage @ vr20 µA @ 1000 V
Current - average rectified60A
Operating temperature - junction175°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
TechnologyStandard
CaseDO-247-2 (Straight Leads)
Reverse recovery time115 ns

Product details

60 A, 1 kV fast recovery in a DO-247 through-hole package

The STTH6010W is a general-purpose fast recovery diode from STMicroelectronics, rated for 1000 V reverse voltage and 60 A average rectified current.

115 ns reverse recovery — switching loss anchor

Reverse recovery time is specified at 115 ns, placing it in the fast-recovery class for a 1 kV / 60 A device. In a hard-switched boost PFC or output rectifier stage, this trr directly sets the turn-off switching loss and the reverse-recovery current spike that the upstream MOSFET or IGBT must absorb. The 2 V forward drop at 60 A is the conduction loss floor at rated current; thermal design must account for both components.

The junction temperature rating of 175 °C maximum supports operation in high-ambient environments typical of enclosed power converters.

Frequently asked questions

What is the reverse recovery time of STTH6010W?

The reverse recovery time is 115 ns, measured under standard test conditions for a fast recovery diode rated above 200 mA.