STTH6010W

STMicroelectronics

STMicroelectronics STTH6010W, general-purpose fast recovery diode, 1000 V reverse voltage, 60 A average rectified current, 115 ns reverse recovery time, DO-247-2 through-hole package, tube.

STMicroelectronics STTH6010W
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Technical specifications

STTH6010W specifications
Parameter / AttributeSpecification / Value
MountingThrough Hole
Voltage - DC reverse (Vr)1000 V
Voltage - forward (Vf) (Max) @ if2 V @ 60 A
Current - reverse leakage @ vr20 µA @ 1000 V
Current - average rectified60A
Operating temperature - junction175°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
TechnologyStandard
CaseDO-247-2 (Straight Leads)
Reverse recovery time115 ns

Technical details

60 A, 1 kV fast recovery in a DO-247 through-hole package

The STTH6010W is a general-purpose fast recovery diode from STMicroelectronics, rated for 1000 V reverse voltage and 60 A average rectified current.

115 ns reverse recovery — switching loss anchor

Reverse recovery time is specified at 115 ns, placing it in the fast-recovery class for a 1 kV / 60 A device. In a hard-switched boost PFC or output rectifier stage, this trr directly sets the turn-off switching loss and the reverse-recovery current spike that the upstream MOSFET or IGBT must absorb. The 2 V forward drop at 60 A is the conduction loss floor at rated current; thermal design must account for both components.

The junction temperature rating of 175 °C maximum supports operation in high-ambient environments typical of enclosed power converters.

STTH6010W
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