The STTH6006W is a 600 V, 60 A fast-recovery epitaxial diode from STMicroelectronics, housed in a DO-247 through-hole package. Its 85 ns reverse recovery time (trr) puts it in the class of diodes that can handle continuous-current-mode (CCM) boost converters and high-frequency output rectification without the switching losses of a standard recovery part.
Parametric fit for power conversion
Rated for 600 V reverse voltage and 60 A average forward current, the STTH6006W suits boost diodes in power-factor-correction stages, secondary-side rectification in 1–2 kW switch-mode supplies, and freewheeling diodes in motor drives. The 1.85 V forward drop at 60 A is the conduction loss floor at rated current; the 50 µA reverse leakage at 600 V is low enough to keep off-state dissipation negligible. Junction temperature is rated to 175°C maximum, so the diode can sit on the same heatsink as a hot MOSFET or IGBT without derating prematurely.
The base product number STTH6006 covers the family; the W suffix denotes the DO-247 package variant.
Peer comparison — STTH6010W and STTH60L06W
The STTH6010W is a 1000 V / 60 A variant with a 115 ns trr — the higher voltage rating comes at the cost of 30 ns slower recovery. The STTH60L06W is a 600 V / 60 A low-forward-drop type with a 105 ns trr. For a 600 V rail where every nanosecond of recovery time matters, the STTH6006W's 85 ns trr gives the lowest switching loss of the three.