STTH5R06B-TR

STMicroelectronics

STMicroelectronics STTH5R06B-TR, fast recovery diode, 600 V, 5 A, 40 ns trr, DPAK surface mount, ROHS3 compliant.

STMicroelectronics STTH5R06B-TR
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[IN STOCK] In Stock: 555 pcs
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STTH5R06B-TR specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if2.9 V @ 5 A
Current - reverse leakage @ vr20 µA @ 600 V
Current - average rectified5A
Operating temperature - junction175°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyStandard
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Reverse recovery time40 ns

Technical details

600 V / 5 A fast recovery diode with 40 ns trr

The STTH5R06B-TR is a 600 V, 5 A fast recovery diode from STMicroelectronics, built with standard planar technology and housed in a DPAK (TO-252-3) surface-mount package. Its 40 ns reverse recovery time places it in the fast-recovery class, suited for switching applications where recovery losses matter.

A 40 ns reverse recovery time at rated current means the diode clears stored charge quickly, reducing turn-off losses in hard-switched topologies. In a continuous-conduction-mode PFC boost stage, this trr keeps the recovery current spike narrow enough that the MOSFET or IGBT does not see excessive overlap loss. At 175°C maximum junction temperature, the thermal design must keep the junction below that ceiling under worst-case load.

STTH5R06B-TR
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