STTH506D

STMicroelectronics

STMicroelectronics STTH506D, Fast Recovery Diode, 600 V, 5 A, 50 ns trr, 1.85 Vf, TO-220AC, Through Hole.

STMicroelectronics STTH506D
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Technical specifications

STTH506D specifications
Parameter / AttributeSpecification / Value
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if1.85 V @ 5 A
Current - reverse leakage @ vr5 µA @ 600 V
Current - average rectified5A
Operating temperature - junction175°C(Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
CaseTO-220-2
Reverse recovery time50 ns

Technical details

The STMicroelectronics STTH506D is a 600 V, 5 A fast recovery epitaxial diode in a TO-220AC through-hole package. Its 50 ns reverse recovery time (trr) qualifies it for hard-switched power conversion stages — boost PFC front-ends, secondary-side output rectification in flyback and forward converters, and freewheeling diodes in motor-drive snubbers.

No official replacement part number is listed by ST; a functionally equivalent fast-recovery diode in the same voltage and current class should be qualified on the board before substituting.

The 50 ns reverse recovery time is the key switching parameter. In a continuous-conduction-mode boost PFC operating at 60–100 kHz, a 50 ns trr keeps the reverse-recovery charge low enough that the MOSFET turn-on loss stays manageable without resorting to silicon-carbide diodes. The 5 µA reverse leakage at the 600 V rated blocking voltage is a room-temperature typical; expect the leakage to rise with junction temperature, so the off-state dissipation should be checked at the 175°C limit if the diode runs hot.

STTH506D
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