STTH4R02S

STMicroelectronics

STMicroelectronics STTH4R02S, Fast Recovery Diode, Standard type, 200 V DC reverse, 4 A average rectified, 30 ns trr, 1.05 Vf, SMC surface mount, 175 °C junction.

STMicroelectronics STTH4R02S
Download datasheet (PDF)
[IN STOCK] In Stock: 627 pcs
$0.48/ pc

Volume pricing

Buy Now

Subtotal:$2.40

MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STTH4R02S specifications
Parameter / AttributeSpecification / Value
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)200 V
Voltage - forward (Vf) (Max) @ if1.05 V @ 4 A
Current - reverse leakage @ vr3 µA @ 200 V
Current - average rectified4A
Operating temperature - junction175°C(Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseDO-214AB, SMC
Reverse recovery time30 ns

Technical details

30 ns recovery — the spec that keeps the snubber cool

The STTH4R02S is a 200 V, 4 A fast recovery diode from STMicroelectronics, built for circuits where a standard recovery part would ring the node and burn passives. The 30 ns reverse recovery time is the key differentiator — it keeps the stored charge low enough that a PFC boost or flyback clamp can run without a heavy snubber.

175 °C junction — thermal headroom in a SMC body

The maximum junction temperature is rated at 175 °C, which gives real margin in a SMC package when the diode is mounted on a standard FR-4 pad. Reverse leakage at 200 V is 3 µA — negligible at room temperature, but it climbs with junction heat; the 175 °C ceiling means the leakage current stays within the thermal budget even under sustained full-load conditions.

STTH4R02S
[ALLOC] verified
Quote