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STMicroelectronics STTH30RQ06L2-TR — Discrete Semiconductors

STTH30RQ06L2-TR Fast Recovery Diode, 30 A, 600 V, 55 ns trr

MPNSTTH30RQ06L2-TR
Active

STMicroelectronics STTH30RQ06L2-TR, Standard Fast Recovery Diode, 30 A average rectified, 600 V reverse voltage, 55 ns reverse recovery time, 2.95 V forward drop at 30 A, Surface Mount, HU3PAK package, 175°C junction temperature.

$4.7000Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STTH30RQ06L2-TR specifications
ParameterValue
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if2.95 V @ 30 A
Current - reverse leakage @ vr40 µA @ 600 V
Current - average rectified30A
Operating temperature - junction175°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Reverse recovery time55 ns

Product details

30 A, 600 V, 55 ns — the fast-recovery rectifier for PFC and flyback stages

It comes in a surface-mount HU3PAK package (TO-263-8 / D²Pak variant) and is specified for a junction temperature up to 175°C.

A 55 ns reverse recovery time at 30 A forward current and 600 V blocking voltage places this diode in the fast-recovery class. The 2.95 V forward drop at 30 A is typical for a 600 V fast-recovery die.

HU3PAK package — footprint and thermal path

The HU3PAK is a surface-mount package with a large exposed metal tab (7 leads plus tab, compatible with the TO-263-8 / D²Pak footprint). The package is rated for surface-mount reflow;.

The part is RoHS-compliant per the standard ST lead-free finish. For sustainment programs, the active status means the factory line is still running; no need to qualify a substitute unless the HU3PAK package becomes unavailable.

Frequently asked questions

What is STTH30RQ06L2-TR's reverse recovery time?

The reverse recovery time (trr) is 55 ns, measured under standard test conditions. This qualifies as fast recovery (≤ 500 ns at > 200 mA).