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STMicroelectronics STTH30RQ06G2Y-TR — Discrete Semiconductors

STTH30RQ06G2Y-TR Diode 600V 30A Fast Recovery, AEC-Q101

MPNSTTH30RQ06G2Y-TR
Active

STMicroelectronics STTH30RQ06G2Y-TR, Automotive Grade, Fast Recovery Diode, 600V 30A, 55ns trr, AEC-Q101, D2PAK HV, Surface Mount.

$2.6600Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesECOPACK®2
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STTH30RQ06G2Y-TR specifications
ParameterValue
SeriesECOPACK®2
MountingSurface Mount
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if2.95 V @ 30 A
Current - reverse leakage @ vr40 µA @ 600 V
Current - average rectified30A
Operating temperature - junction-40°C ~ 175°C
GradeAutomotive
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyStandard
QualificationAEC-Q101
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Reverse recovery time55 ns

Product details

600 V, 30 A fast-recovery diode for automotive and industrial power stages

The STTH30RQ06G2Y-TR is an automotive-grade fast-recovery rectifier from STMicroelectronics, rated 600 V reverse voltage and 30 A average forward current, with a 55 ns reverse recovery time.

The 55 ns reverse recovery time cuts the switching loss in continuous-current-mode boost and flyback topologies. At 30 A forward current, the stored charge clears fast enough that the downstream MOSFET or IGBT sees a clean voltage rise, reducing the snubber burden and allowing higher switching frequencies without thermal runaway in the diode.

AEC-Q101 and 175°C junction — the automotive reliability envelope

AEC-Q101 qualification means the die, bond wires, and package have passed the stress tests for automotive-grade semiconductors: high-temperature reverse bias, temperature cycling, and power cycling. The 40 µA maximum reverse leakage at 600 V is the datasheet ceiling; actual leakage at rated load and 125°C junction is typically lower, but the 175°C rating gives headroom for fault conditions.

D2PAK HV — footprint and thermal path

The D2PAK HV (TO-263-3) package is the high-voltage variant of the standard D2PAK, with a longer creepage path between the tab (cathode) and the gate/anode pin. For 30 A continuous conduction, a 2 oz copper pour of at least 6 cm² under the tab keeps the junction below 125°C at 85°C ambient.

The ECOPAK®2 series designation indicates the package is halogen-free and meets the current REACH and RoHS exemptions.

Frequently asked questions

Is STTH30RQ06G2Y-TR AEC-Q101 qualified?

Yes. The STTH30RQ06G2Y-TR carries AEC-Q101 qualification, which is the automotive-grade stress-test standard for discrete semiconductors. It is suitable for powertrain, chassis, and body-electronics applications that require the part to survive high-temperature reverse bias, temperature cycling, and power cycling without parametric drift.

What is the reverse recovery time of STTH30RQ06G2Y-TR?

The reverse recovery time (trr) is 55 ns, measured at standard test conditions. This fast recovery characteristic makes it suitable for continuous-current-mode boost converters and output rectification stages where switching losses must be minimised.

Is STTH30RQ06G2Y-TR a drop-in replacement for STTH30RQ06?

The STTH30RQ06G2Y-TR shares the same die and electrical ratings (600 V, 30 A, 55 ns trr) as the STTH30RQ06, but the package differs. The G2 suffix indicates the D2PAK HV package with a longer creepage path versus the standard D2PAK. The footprint is the same TO-263-3 pad layout, so it is mechanically interchangeable, but the higher creepage on the G2 variant may affect clearance to adjacent high-voltage traces. Verify the creepage distance against your PCB layout before substituting.