STTH30R04D

STMicroelectronics

STMicroelectronics STTH30R04D, Fast Recovery Diode, 400 V, 30 A, 100 ns trr, TO-220AC, Through Hole, -40°C to 175°C.

STMicroelectronics STTH30R04D
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Technical specifications

STTH30R04D specifications
Parameter / AttributeSpecification / Value
MountingThrough Hole
Voltage - DC reverse (Vr)400 V
Voltage - forward (Vf) (Max) @ if1.45 V @ 30 A
Current - reverse leakage @ vr15 µA @ 400 V
Current - average rectified30A
Operating temperature - junction-40°C ~ 175°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
TechnologyStandard
CaseTO-220-2
Reverse recovery time100 ns

Technical details

400 V, 30 A fast recovery diode for PFC and boost stages

The STMicroelectronics STTH30R04D is a 400 V, 30 A general-purpose fast-recovery rectifier in a TO-220AC through-hole package.

The 100 ns trr at 400 V reverse voltage and 30 A forward current is the parameter that determines how much the diode rings during turn-off. In a hard-switched PFC stage running at 100 kHz, that recovery time keeps the reverse-recovery charge low enough that the MOSFET body diode or SiC Schottky alternative isn't forced into conduction. The 1.45 V forward drop at 30 A sets the conduction loss at 43.5 W — the TO-220AC package with a properly sized heatsink handles that thermal load, but the junction must stay below 175°C.

Junction temperature range and environment

The 15 µA reverse leakage at 400 V and 25°C rises with temperature; at 150°C junction the leakage can dominate the off-state losses, so the thermal design should account for the leakage current at the operating temperature.

The TO-220AC package is a common through-hole footprint, so second-sourcing to a pin-compatible fast-recovery diode from another manufacturer is straightforward if dual-supply resilience is needed.

STTH30R04D
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