STTH30M06SPF

STMicroelectronics

STMicroelectronics STTH30M06SPF, Fast Recovery Diode, 600 V, 30 A, 35 ns trr, TO-3P-3 Full Pack (TO-3PF), Through Hole, Tube

STMicroelectronics STTH30M06SPF
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Technical specifications

STTH30M06SPF specifications
Parameter / AttributeSpecification / Value
MountingThrough Hole
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if3.8 V @ 30 A
Current - reverse leakage @ vr60 µA @ 600 V
Current - average rectified30A
Operating temperature - junction175°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
TechnologyStandard
CaseTO-3P-3 Full Pack
Reverse recovery time35 ns

Technical details

600 V, 30 A, 35 ns — the fast-recovery diode for PFC boost stages

Its 35 ns reverse-recovery time (trr) keeps switching losses low in continuous-conduction-mode (CCM) PFC designs running above 50 kHz.

A 35 ns trr at 30 A forward current means the diode clears stored charge fast enough that the MOSFET or IGBT in the same leg does not see a shoot-through spike during hard commutation. For a 400 V bus CCM PFC running at 70 kHz, this trr keeps the reverse-recovery charge (Qrr) low enough that the boost MOSFET's turn-on loss stays within the thermal budget without snubber components. The forward voltage drop is specified at 3.8 V max at 30 A — a trade-off for the fast recovery. At lower loads the Vf drops, but the designer should budget conduction loss at full load against the heatsink's thermal resistance.

TO-3PF full-pack — no insulator, no grease

The TO-3P-3 Full Pack (TO-3PF) package has an isolated tab. This cuts assembly time and eliminates the risk of a cracked insulator during torque-down. The junction is rated to 175 °C max, so the full-pack's higher thermal resistance (compared to a standard TO-247) still works for 30 A continuous if the heatsink is sized for the 3.8 V × 30 A = 114 W worst-case conduction loss.

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