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STMicroelectronics STTH3010W — Discrete Semiconductors

STTH3010W Fast Recovery Diode, 1000V 30A DO-247

MPNSTTH3010W
Active

STMicroelectronics STTH3010W, Fast Recovery Diode, 1000 V Vr, 30 A Io, 100 ns trr, DO-247-2 (Straight Leads), Through Hole, Tube.

$4.1300Ref. price · indicative, final on quote
PackagingDO-247-2 (Straight Leads)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STTH3010W specifications
ParameterValue
MountingThrough Hole
Voltage - DC reverse (Vr)1000 V
Voltage - forward (Vf) (Max) @ if2 V @ 30 A
Current - reverse leakage @ vr15 µA @ 1000 V
Current - average rectified30A
Operating temperature - junction175°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
TechnologyStandard
CaseDO-247-2 (Straight Leads)
Reverse recovery time100 ns

Product details

1000 V, 30 A, 100 ns — the PFC and SMPS output diode

The STTH3010W is a 1000 V, 30 A fast recovery diode from STMicroelectronics in a DO-247 through-hole package.

At 30 A and 1000 V blocking, a 100 ns trr keeps the reverse recovery charge low enough that a 50-100 kHz hard-switching converter stays within junction temperature. The 175 °C max Tj rating gives headroom for the heatsink design — you are not forced into a larger package or a SiC diode unless the frequency pushes past 150 kHz. Forward voltage is 2 V max at 30 A. That is 60 W conduction loss at full load, which lands on the heatsink. The DO-247 tab is the thermal path — bolt it to a finned heatsink with thermal compound and the junction-to-case thermal resistance stays under control.

Active production, through-hole, ROHS3

Frequently asked questions

What is the reverse recovery time of STTH3010W?

The STTH3010W has a reverse recovery time of 100 ns. That is the standard fast-recovery tier for a 1000 V, 30 A diode — fast enough for 50-100 kHz hard switching without forcing a move to SiC.