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STMicroelectronics STTH3010GY-TR — Discrete Semiconductors

STTH3010GY-TR 1000V 30A Automotive Fast Recovery Diode

MPNSTTH3010GY-TR
Active

STMicroelectronics STTH3010GY-TR, Automotive Grade Fast Recovery Diode, 1000 V DC Reverse, 30 A Average Rectified, 100 ns trr, AEC-Q101, D²PAK, Surface Mount.

$3.0100Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STTH3010GY-TR specifications
ParameterValue
MountingSurface Mount
Voltage - DC reverse (Vr)1000 V
Voltage - forward (Vf) (Max) @ if2 V @ 30 A
Current - reverse leakage @ vr15 µA @ 1000 V
Current - average rectified30A
Operating temperature - junction-40°C ~ 175°C
GradeAutomotive
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyStandard
QualificationAEC-Q101
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Reverse recovery time100 ns

Product details

1000 V, 30 A, 100 ns — the automotive fast recovery diode for high-voltage DC links

The STTH3010GY-TR is a 1000 V, 30 A fast recovery rectifier in a D²PAK package, qualified to AEC-Q101 for automotive power-train and chassis applications. Its 100 ns reverse recovery time keeps switching losses manageable in hard-switched topologies like boost PFC stages, DC-DC converters, and traction inverter freewheeling paths.

175 °C junction — thermal headroom for under-hood environments

AEC-Q101 and active lifecycle — production-fit for automotive BOMs

The 15 µA reverse leakage at 1000 V is the datasheet maximum at 25 °C; expect leakage to rise with junction temperature, so budget derating in high-temperature idle conditions.

Frequently asked questions

Is STTH3010GY-TR AEC-Q101 qualified?

Yes, it carries AEC-Q101 qualification, making it suitable for automotive-grade applications including under-hood and chassis-domain power electronics.

What is the reverse recovery time of STTH3010GY-TR?

The reverse recovery time (trr) is 100 ns, classifying it as a fast recovery diode for switching frequencies where recovery charge losses matter.