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STMicroelectronics STTH3006DPI — Discrete Semiconductors

STTH3006DPI Fast Recovery Diode, 600V 30A, 45ns trr, DOP3I

MPNSTTH3006DPI
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STMicroelectronics STTH3006DPI, Fast Recovery Diode, 600 V DC reverse voltage, 30 A average rectified current, 45 ns reverse recovery time, DOP3I-2 Insulated Through Hole package.

$6.4900Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STTH3006DPI specifications
ParameterValue
MountingThrough Hole
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if3.6 V @ 30 A
Current - reverse leakage @ vr40 µA @ 600 V
Current - average rectified30A
Operating temperature - junction150°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
TechnologyStandard
CaseDOP3I-2 Insulated (Straight Leads)
Reverse recovery time45 ns

Product details

What this 600 V, 30 A fast recovery diode is for

The STMicroelectronics STTH3006DPI is a 600 V, 30 A fast-recovery epitaxial diode with a 45 ns reverse recovery time (trr), housed in a DOP3I-2 insulated through-hole package with straight leads. It is designed for continuous-current-mode power factor correction (PFC), output rectification in switch-mode power supplies, and snubber/freewheeling applications where low switching losses matter. The 45 ns trr keeps the reverse-recovery charge small enough to reduce EMI and switching dissipation in hard-switched converters running above 50 kHz.

A 45 ns reverse recovery time at 30 A forward current and 600 V blocking voltage puts this diode in the class that suits continuous-conduction-mode PFC stages and high-frequency output rectifiers. The fast turn-off reduces the overlap loss in the MOSFET or IGBT it pairs with, and the soft-recovery characteristic (typical of ST's Turbo 2 family) helps control ringing without aggressive snubbing. If your design runs above 100 kHz switching frequency, the recovery charge still stays manageable — check the Qrr curve in the datasheet for your specific di/dt and temperature.

Forward drop and thermal budget at 30 A

Maximum forward voltage is 3.6 V at 30 A, which sets the conduction loss at roughly 108 W peak. That number drives the heatsink sizing — the DOP3I insulated package is designed for bolted mounting to a heatsink through the M3 hole in the tab, and the junction temperature maxes out at 150 °C. In practice, at 30 A average with a 50 % duty cycle in a PFC stage, you are looking at a substantial extruded heatsink or forced air.

For a new design going into production, this means you can qualify it without building a life-cycle buy contingency into the BOM. The base product number is STTH3006, and the DPI suffix identifies the DOP3I insulated package variant.

Frequently asked questions

What is the reverse recovery time of STTH3006DPI?

The reverse recovery time (trr) is 45 ns, measured at the rated forward current and reverse voltage conditions typical for fast-recovery diodes in this voltage class.

Is STTH3006DPI equivalent to any other diode?

No pin-compatible equivalent is listed in the official cross-reference for this order code. The STTH3006 family shares the same die technology across package variants, but the DOP3I insulated package is specific to the DPI suffix. If you need a second source, compare the 600 V / 30 A / 45 ns trr window against other TO-247-2L insulated-package fast diodes from major vendors — verify the mounting hole position and lead form against your heatsink layout.