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STMicroelectronics STTH20R04D — Discrete Semiconductors

STTH20R04D 400V 20A Fast Recovery Diode, TO-220AC, 45 ns trr

MPNSTTH20R04D
Active

STMicroelectronics STTH20R04D, Fast Recovery Diode, 400V Vr, 20A Io, 45 ns trr, 1.7V Vf at 20A, TO-220AC, Through Hole, -65 to 175°C junction.

$1.6300Ref. price · indicative, final on quote
PackagingTO-220-2
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STTH20R04D specifications
ParameterValue
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)400 V
Voltage - forward (Vf) (Max) @ if1.7 V @ 20 A
Current - reverse leakage @ vr20 µA @ 400 V
Current - average rectified20A
Operating temperature - junction175°C(Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
CaseTO-220-2
Reverse recovery time45 ns

Product details

45 ns reverse recovery — the switching-loss ceiling

The STTH20R04D is a 400 V, 20 A fast-recovery epitaxial diode from STMicroelectronics, in a TO-220AC through-hole package. Its 45 ns reverse recovery time (trr) is the number that decides whether it works in a high-frequency PFC boost stage or a line rectifier.

20 A continuous, 1.7 V forward drop — thermal budget

400 V blocking, 20 µA leakage — rail margin

The 400 V reverse voltage rating covers a 230 VAC rectified rail (≈325 VDC) with 75 V headroom. Reverse leakage is 20 µA at 400 V, 25 °C — negligible for standby power, but it rises with temperature; at 125 °C junction the leakage can increase by an order of magnitude, so factor that into the off-state loss estimate for high-temperature operation.

Frequently asked questions

What is the reverse recovery time of STTH20R04D?

The STTH20R04D has a reverse recovery time (trr) of 45 ns, which qualifies it as a fast recovery diode (≤500 ns at >200 mA). This 45 ns trr is the key parameter for switching applications like PFC boost stages and output rectification in switch-mode power supplies.