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STMicroelectronics STTH2003CFP — Discrete Semiconductors

STTH2003CFP 300V 10A Fast Recovery Diode, 35ns trr, TO-220FP

MPNSTTH2003CFP
Active

ST STTH2003CFP, Fast Recovery Diode Array, 1 Pair Common Cathode, 300V Vr, 10A Io per diode, 35ns trr, 1.25V Vf @ 10A, TO-220-3 Full Pack (TO-220FP), Through Hole, Tube.

$1.8400Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STTH2003CFP specifications
ParameterValue
MountingThrough Hole
Voltage - DC reverse (Vr)300 V
Voltage - forward (Vf) (Max) @ if1.25 V @ 10 A
Current - reverse leakage @ vr20 µA @ 300 V
Current - average rectified (Io) (per diode)10A
Operating temperature - junction175°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
TechnologyStandard
CaseTO-220-3 Full Pack
Diode configuration1 Pair Common Cathode
Reverse recovery time35 ns

Product details

35 ns trr — fast recovery for PFC and secondary rectification

300 V / 10 A — the application envelope

With a 300 V reverse voltage ceiling and 10 A forward current per diode, this part handles the voltage stress in a 400 VDC bus PFC stage with margin, and the current density for a 200–300 W output rectifier. The 1.25 V forward drop at 10 A sets the conduction loss floor — at 10 A that is 12.5 W per diode, so the TO-220FP full-pack package must be heatsunk to keep the junction below the 175°C absolute maximum.

TO-220FP — isolated full-pack, no insulating pad needed

The TO-220FP (full-pack) package has the metal tab fully encapsulated in plastic, so the heatsink interface is electrically isolated. That saves the cost and assembly step of a separate insulating pad and thermal grease. The through-hole mounting suits single-sided or two-layer power boards where the tab is bolted directly to a chassis or heatsink.

Frequently asked questions

What is the reverse recovery time (trr) of the STTH2003CFP?

The reverse recovery time is 35 ns, which qualifies it as an ultrafast diode suitable for switching frequencies above 50 kHz in PFC and output rectifier stages.