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STMicroelectronics STTH2002DI — Discrete Semiconductors

STTH2002DI diode, 200 V 20 A fast recovery, 40 ns trr

MPNSTTH2002DI
Active

STMicroelectronics STTH2002DI, Standard Diode, Fast Recovery =< 500ns, > 200mA (Io), 200 V, 20 A, 40 ns trr, 1.1 Vf @ 20 A, TO-220AC Insulated, Through Hole, Tube.

$1.6500Ref. price · indicative, final on quote
PackagingTO-220-2 Insulated, TO-220AC
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STTH2002DI specifications
ParameterValue
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)200 V
Voltage - forward (Vf) (Max) @ if1.1 V @ 20 A
Current - reverse leakage @ vr10 µA @ 200 V
Current - average rectified20A
Operating temperature - junction175°C(Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
CaseTO-220-2 Insulated, TO-220AC
Reverse recovery time40 ns

Product details

The STTH2002DI is a 200 V, 20 A fast recovery diode from STMicroelectronics, built for circuits where switching speed matters more than a standard rectifier. Its 40 ns reverse recovery time (trr) is the spec that decides fit: it keeps the diode from conducting backward during the turn-off transition, which directly cuts switching losses in PFC stages, output rectifiers in flyback converters, and snubber clamps. The 1.1 V forward drop at 20 A means 22 W of conduction loss at full load — the TO-220AC insulated package (with the tab electrically isolated) handles that heat, but the heatsink needs to be sized for the duty cycle.

Package and thermal: TO-220AC insulated

Through-hole TO-220AC with an insulated tab — the mounting hole is electrically isolated from the cathode, so no insulating washer or thermal pad is needed between the tab and the heatsink. Reverse leakage is 10 µA at 200 V, which stays low enough at elevated junction temperatures to avoid thermal runaway in typical 100 kHz SMPS designs.

Frequently asked questions

What is the reverse recovery time of STTH2002DI?

The reverse recovery time (trr) is 40 ns, which qualifies it as a fast recovery diode (under 500 ns at >200 mA). This 40 ns trr is the key parameter that reduces switching losses in high-frequency rectifier and snubber circuits.