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STMicroelectronics STTH2002CT — Discrete Semiconductors

STTH2002CT 200 V 15 A Ultrafast Diode Array, 27 ns trr

MPNSTTH2002CT
Active

STMicroelectronics STTH2002CT, ultrafast recovery diode array, 200 V Vrrm, 15 A per diode (Io), 27 ns trr, 1.1 Vf at 10 A, common-cathode pair in TO-220-3, through-hole, active.

$1.2900Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STTH2002CT specifications
ParameterValue
MountingThrough Hole
Voltage - DC reverse (Vr)200 V
Voltage - forward (Vf) (Max) @ if1.1 V @ 10 A
Current - reverse leakage @ vr10 µA @ 200 V
Current - average rectified (Io) (per diode)15A
Operating temperature - junction175°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
TechnologyStandard
CaseTO-220-3
Diode configuration1 Pair Common Cathode
Reverse recovery time27 ns

Product details

200 V, 15 A common-cathode ultrafast — where it fits in the power stage

The STTH2002CT is a dual-diode array from STMicroelectronics, pairing two 200 V, 15 A ultrafast recovery rectifiers in a common-cathode configuration inside a single TO-220-3 through-hole package.

The 27 ns reverse recovery time is the part's defining parametric. At 200 V blocking and 15 A forward, that trr keeps the reverse-recovery charge low enough that a 100 kHz PFC boost stage runs without excessive turn-on loss in the MOSFET. Compare this to a standard 200 V recovery diode (trr typically 200–500 ns) where the stored charge would double the switching loss and push the junction temperature past the 175 °C rated maximum.

Forward drop and thermal budget at 10 A

That 1.1 V times the average current gives the conduction loss per diode — 11 W at 10 A, before derating. In a 15 A continuous application the junction-to-case thermal path through the TO-220 tab needs a heatsink sized to keep Tj below 175 °C. The 10 µA reverse leakage at 200 V (25 °C) is negligible at room temperature but rises with junction temperature; at 125 °C junction the leakage can increase by an order of magnitude, so the thermal design should budget for that shift.

Frequently asked questions

What is the reverse recovery time of STTH2002CT?

The reverse recovery time (trr) is 27 ns. That is the typical value at rated conditions — fast enough for 100 kHz+ hard-switched topologies like PFC boost and LLC output rectification.