STTH2002CT

STMicroelectronics

STMicroelectronics STTH2002CT, ultrafast recovery diode array, 200 V Vrrm, 15 A per diode (Io), 27 ns trr, 1.1 Vf at 10 A, common-cathode pair in TO-220-3, through-hole, active.

STMicroelectronics STTH2002CT
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Technical specifications

STTH2002CT specifications
Parameter / AttributeSpecification / Value
MountingThrough Hole
Voltage - DC reverse (Vr)200 V
Voltage - forward (Vf) (Max) @ if1.1 V @ 10 A
Current - reverse leakage @ vr10 µA @ 200 V
Current - average rectified (Io) (per diode)15A
Operating temperature - junction175°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
TechnologyStandard
CaseTO-220-3
Diode configuration1 Pair Common Cathode
Reverse recovery time27 ns

Technical details

200 V, 15 A common-cathode ultrafast — where it fits in the power stage

The STTH2002CT is a dual-diode array from STMicroelectronics, pairing two 200 V, 15 A ultrafast recovery rectifiers in a common-cathode configuration inside a single TO-220-3 through-hole package.

The 27 ns reverse recovery time is the part's defining parametric. At 200 V blocking and 15 A forward, that trr keeps the reverse-recovery charge low enough that a 100 kHz PFC boost stage runs without excessive turn-on loss in the MOSFET. Compare this to a standard 200 V recovery diode (trr typically 200–500 ns) where the stored charge would double the switching loss and push the junction temperature past the 175 °C rated maximum.

Forward drop and thermal budget at 10 A

That 1.1 V times the average current gives the conduction loss per diode — 11 W at 10 A, before derating. In a 15 A continuous application the junction-to-case thermal path through the TO-220 tab needs a heatsink sized to keep Tj below 175 °C. The 10 µA reverse leakage at 200 V (25 °C) is negligible at room temperature but rises with junction temperature; at 125 °C junction the leakage can increase by an order of magnitude, so the thermal design should budget for that shift.

STTH2002CT
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