STTH16L06CG-TR

STMicroelectronics

STMicroelectronics STTH16L06CG-TR, Fast Recovery Diode Array, 600 V, 10 A per diode, 55 ns reverse recovery time, Common Cathode, Surface Mount D2PAK, 175°C Junction.

STMicroelectronics STTH16L06CG-TR
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[IN STOCK] In Stock: 12 pcs
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MOQ 1 · Tape & Reel (TR) Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STTH16L06CG-TR specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if1.8 V @ 8 A
Current - reverse leakage @ vr8 µA @ 600 V
Current - average rectified (Io) (per diode)10A
Operating temperature - junction175°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyStandard
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Diode configuration1 Pair Common Cathode
Reverse recovery time55 ns

Technical details

55 ns trr — the switching-speed anchor for PFC boost stages

The headline number is the 55 ns reverse recovery time, which places it in the fast-recovery class for hard-switched boost converters, power-factor-correction stages, and secondary-side rectification in medium-frequency SMPS.

Parametric profile for the BOM

Forward voltage is specified at 1.8 V maximum at 8 A per diode, and reverse leakage is 8 µA at the 600 V blocking rating.

STTH16L06CG-TR
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