STTH16003TV1

STMicroelectronics

STMicroelectronics STTH16003TV1, Fast Recovery Diode, 300 V Vr, 60 A average per diode, 80 ns trr, 1.2 Vf at 80 A, 2 Independent, ISOTOP, Chassis Mount, Active.

STMicroelectronics STTH16003TV1
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Technical specifications

STTH16003TV1 specifications
Parameter / AttributeSpecification / Value
MountingChassis Mount
Voltage - DC reverse (Vr)300 V
Voltage - forward (Vf) (Max) @ if1.2 V @ 80 A
Current - reverse leakage @ vr200 µA @ 300 V
Current - average rectified (Io) (per diode)60A
Operating temperature - junction150°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
TechnologyStandard
CaseISOTOP
Diode configuration2 Independent
Reverse recovery time80 ns

Technical details

80 ns trr — fast enough for 100 kHz switching

Its 80 ns reverse recovery time (trr) puts it in the fast-recovery class (≤500 ns, >200 mA), making it a candidate for the output rectifier in a 100 kHz SMPS or the boost diode in a PFC stage where switching losses matter. Two independent diodes in the same ISOTOP package let you build a center-tap full-wave rectifier or a dual-output boost without a second device.

60 A per diode — thermal budget in an ISOTOP

At 60 A average per diode, the forward drop hits 1.2 V at 80 A (the max test point). That's about 72 W per diode at full rated current — the ISOTOP chassis-mount package is designed to bolt directly to a heatsink or chassis wall to pull that heat away. The junction is rated to 150°C max, so the thermal interface and airflow matter: a 0.5°C/W heatsink keeps the die below 125°C at 60 A continuous per diode in a 50°C ambient. Off-state leakage is 200 µA at 300 V — negligible for most designs, but worth a sanity check if the diode sits in a high-impedance node.

Active, but the ISOTOP footprint is the constraint

The ISOTOP package is a standard ST power-module footprint, so second-sourcing is straightforward if you ever need it. The base product number STTH16003 covers the family; the TV1 suffix denotes the ISOTOP variant.

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