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STMicroelectronics STTH15RQ06G2-TR — Discrete Semiconductors

STTH15RQ06G2-TR 600 V 15 A Fast Recovery Diode, 50 ns trr

MPNSTTH15RQ06G2-TR
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STMicroelectronics STTH15RQ06G2-TR, Standard Diode, Fast Recovery =< 500ns, > 200mA (Io), 600 V DC Reverse, 15 A Average Rectified, 50 ns Reverse Recovery Time, 175°C Junction, Surface Mount D2PAK HV, Tape & Reel.

$1.6100Ref. price · indicative, final on quote
STMicroelectronics STTH15RQ06G2-TR datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STTH15RQ06G2-TR specifications
ParameterValue
SeriesECOPACK®2
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if2.95 V @ 15 A
Current - reverse leakage @ vr20 µA @ 600 V
Current - average rectified15A
Operating temperature - junction175°C(Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Reverse recovery time50 ns

Product details

50 ns trr — the hard-switching floor

The STTH15RQ06G2-TR is a 600 V, 15 A fast-recovery epitaxial diode with a 50 ns reverse recovery time. Maximum junction temperature is 175°C.

Forward drop and leakage at the operating point

Maximum forward voltage is 2.95 V at 15 A, a figure that sets the conduction loss floor in a 15 A boost diode application; reverse leakage is 20 µA at the 600 V rated blocking voltage.

Package and sourcing posture

The ECOPACK®2 series designation confirms RoHS compliance and halogen-free construction per ST's internal green-molding specification.

Frequently asked questions

What is the reverse recovery time (trr) of STTH15RQ06G2-TR?

The reverse recovery time is 50 ns, making the diode suitable for hard-switching topologies where recovery losses matter.