STTH1210DI

STMicroelectronics

STMicroelectronics STTH1210DI standard fast recovery diode, 1000 V DC reverse, 12 A average rectified, 90 ns reverse recovery time, TO-220AC insulated through-hole package, junction temperature 175 °C max.

STTH1210DI
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Technical specifications

STTH1210DI specifications
Parameter / AttributeSpecification / Value
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)1000 V
Voltage - forward (Vf) (Max) @ if2 V @ 12 A
Current - reverse leakage @ vr10 µA @ 1000 V
Current - average rectified12A
Operating temperature - junction175°C(Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
CaseTO-220-2 Insulated, TO-220AC
Reverse recovery time90 ns

Technical details

1 kV, 12 A fast recovery — switching loss ceiling

The STTH1210DI is a standard fast recovery diode from STMicroelectronics, rated for 1000 V DC reverse voltage and 12 A average rectified current. Its 90 ns reverse recovery time (trr) sets the switching loss floor in hard-switched topologies — PFC boost stages, flyback clamp circuits, and output rectification in 1 kW-class SMPS. The 2 V maximum forward voltage at 12 A (Vf) and 10 µA reverse leakage at 1000 V (Vr) are the conduction and blocking benchmarks.

TO-220AC insulated — no mica washer needed

The TO-220AC insulated package (Supplier Device Package TO-220AC ins) isolates the tab from the die electrically — the mounting hole and back surface are at the same potential as the cathode, but the package body is rated for full isolation. This eliminates the mica washer and bushing from the BOM, speeds assembly, and improves thermal transfer to the heatsink.

STTH1210DI
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