STTH1210D

STMicroelectronics

STMicroelectronics STTH1210D, Fast Recovery Diode, Standard, 1000 V, 12 A, 90 ns reverse recovery, 2 V forward voltage at 12 A, TO-220AC, Through Hole.

STMicroelectronics STTH1210D
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Technical specifications

STTH1210D specifications
Parameter / AttributeSpecification / Value
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)1000 V
Voltage - forward (Vf) (Max) @ if2 V @ 12 A
Current - reverse leakage @ vr10 µA @ 1000 V
Current - average rectified12A
Operating temperature - junction175°C(Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
CaseTO-220-2
Reverse recovery time90 ns

Technical details

90 ns reverse recovery at 1 kV — the switching edge

The STTH1210D is a 1 kV, 12 A fast recovery diode from STMicroelectronics with a reverse recovery time (trr) of 90 ns. This combination of high blocking voltage and fast turn-off places it in the boost-PFC stage of switch-mode power supplies and in flyback converters where the diode must snap off cleanly before the next switching cycle begins.

Forward voltage and leakage — the thermal budget

Maximum forward voltage is 2 V at 12 A, which sets the conduction loss floor. Reverse leakage at rated blocking voltage is 10 µA — negligible at room temperature but it rises exponentially with junction temperature. The maximum junction temperature is 175 °C, so the designer must account for the Vf × If product plus the leakage power at high line in the heatsink calculation.

STTH1210D
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