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STMicroelectronics STTH1202DI — Discrete Semiconductors

STTH1202DI Fast Recovery Diode, 200 V, 12 A, 35 ns trr

MPNSTTH1202DI
Obsolete

STMicroelectronics STTH1202DI fast recovery diode, 200 V reverse, 12 A average rectified, 35 ns reverse recovery time, TO-220AC insulated through-hole package.

$1.1700Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STTH1202DI specifications
ParameterValue
MountingThrough Hole
Voltage - DC reverse (Vr)200 V
Voltage - forward (Vf) (Max) @ if1.1 V @ 12 A
Current - reverse leakage @ vr10 µA @ 200 V
Current - average rectified12A
Operating temperature - junction175°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
TechnologyStandard
CaseTO-220-2 Insulated, TO-220AC
Reverse recovery time35 ns

Product details

That trr puts it in the class of ultrafast diodes suited for high-frequency rectification in switch-mode power supplies and freewheeling circuits, where recovery charge directly impacts switching losses and EMI.

12 A average current and 200 V blocking

Rated for 12 A average rectified current (Io) and 200 V DC reverse voltage (Vr max). Forward voltage drop is 1.1 V at 12 A; reverse leakage is 10 µA at 200 V.

TO-220AC insulated package — mounting and thermal path

Junction temperature rating goes to 175 °C.

Frequently asked questions

What is the difference between STTH1202DI and STTH1202?

The STTH1202DI uses the TO-220AC insulated (full-pack) package, where the metal tab is fully encapsulated. The STTH1202 uses a standard TO-220AC with an exposed metal tab. Electrically they share the same 200 V, 12 A, 35 ns trr ratings, but the DI variant eliminates the need for an insulating pad between the device and heatsink.

What is STTH1202DI's reverse recovery time?

The reverse recovery time (trr) is 35 ns, making it a fast recovery diode suitable for switching frequencies where recovery losses matter.