STTH12012TV1

STMicroelectronics

STMicroelectronics STTH12012TV1 fast recovery diode module, 2 independent diodes, 1200 V reverse, 60 A average per diode, 125 ns trr, ISOTOP chassis mount, tube.

STMicroelectronics STTH12012TV1
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[IN STOCK] In Stock: 2 pcs
$50.86/ pc

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Technical specifications

STTH12012TV1 specifications
Parameter / AttributeSpecification / Value
MountingChassis Mount
Voltage - DC reverse (Vr)1200 V
Voltage - forward (Vf) (Max) @ if2.25 V @ 60 A
Current - reverse leakage @ vr30 µA @ 1200 V
Current - average rectified (Io) (per diode)60A
Operating temperature - junction150°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
TechnologyStandard
CaseISOTOP
Diode configuration2 Independent
Reverse recovery time125 ns

Technical details

ISOTOP chassis mount — bolted-down thermal path

The STTH12012TV1: Housed in the ISOTOP (also ISOTOP®) package, the module bolts directly to a heatsink or chassis. The baseplate provides the primary thermal interface — the junction-to-case thermal resistance is set by the die attach and the copper base, not by a plastic body. Chassis-mount means the diode sits outside the PCB area; the power loop runs through screw terminals or busbars, keeping the board trace current off the high-current path.

Forward drop and leakage — the thermal budget drivers

At 60 A forward current, the maximum forward voltage (Vf) is 2.25 V — that is 135 W conduction loss per diode at full load, which the heatsink must extract. Reverse leakage at the full 1200 V blocking voltage is 30 µA, negligible for the static loss calculation but worth noting for parallel operation: a small mismatch in Vf between the two independent diodes in the same package can unbalance the current sharing, so a derated total current is safer than running both legs at the 60 A ceiling simultaneously.

STTH12012TV1
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