Skip to main content
STMicroelectronics STTH10R04G — Discrete Semiconductors

STTH10R04G Fast Recovery Diode, 400V 10A, 40ns trr, D2PAK

MPNSTTH10R04G
Obsolete

STMicroelectronics STTH10R04G, Fast Recovery =< 500ns, > 200mA (Io), 400V, 10A, 40ns trr, D2PAK, Surface Mount.

$1.4700Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STTH10R04G specifications
ParameterValue
MountingSurface Mount
Voltage - DC reverse (Vr)400 V
Voltage - forward (Vf) (Max) @ if1.7 V @ 10 A
Current - reverse leakage @ vr10 µA @ 400 V
Current - average rectified10A
Operating temperature - junction175°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
TechnologyStandard
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Reverse recovery time40 ns

Product details

The STTH10R04G is a 400 V, 10 A fast-recovery rectifier from STMicroelectronics, built with standard planar technology and housed in a D2PAK (TO-263AB) surface-mount package. Its 40 ns reverse recovery time (trr) puts it squarely in the ultrafast class for a 400 V part — fast enough to keep switching losses low in a 50–100 kHz PFC boost or flyback clamp, without the snap-off characteristic of some hyperfast diodes that can ring up the node. The 1.7 V forward drop at 10 A is a typical trade-off for that speed; you trade a volt of conduction loss for the recovery charge savings.

Obsolete — the sourcing reality

10 A continuous, 175 °C junction — the thermal budget

The 10 µA reverse leakage at 400 V is a room-temperature number; expect it to multiply at 150 °C junction, so budget for that in the standby-loss calculation.

Frequently asked questions

What is the reverse recovery time of STTH10R04G?

The reverse recovery time (trr) is 40 ns, which qualifies it as an ultrafast diode for a 400 V part. That 40 ns trr keeps switching losses manageable in the 50–100 kHz range.