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STMicroelectronics STTH10R04FP — Discrete Semiconductors

STTH10R04FP Fast Recovery Diode, 400 V, 10 A, 40 ns trr

MPNSTTH10R04FP
Obsolete

STMicroelectronics STTH10R04FP fast recovery rectifier diode, 400 V reverse, 10 A average, 40 ns trr, TO-220-2 Full Pack (TO-220FPAC), through-hole.

STMicroelectronics STTH10R04FP datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STTH10R04FP specifications
ParameterValue
MountingThrough Hole
Voltage - DC reverse (Vr)400 V
Voltage - forward (Vf) (Max) @ if1.7 V @ 10 A
Current - reverse leakage @ vr10 µA @ 400 V
Current - average rectified10A
Operating temperature - junction175°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
TechnologyStandard
CaseTO-220-2 Full Pack
Reverse recovery time40 ns

Product details

40 ns reverse recovery — the switching-loss ceiling

The STTH10R04FP is a fast-recovery epitaxial diode from STMicroelectronics rated at 400 V reverse voltage and 10 A average forward current. Its 40 ns reverse recovery time (trr) is the parameter that determines switching losses in hard-switched topologies — a 40 ns trr keeps the recovery charge low enough for continuous-conduction-mode PFC stages and high-frequency rectification in the 50–100 kHz range.

1.7 V forward drop at 10 A — conduction loss budget

That 1.7 V times the average current gives the conduction loss floor — 17 W at full load. The TO-220FPAC full-pack package isolates the tab electrically, so no insulating washer is needed against the heatsink, but the thermal path is through the full plastic body, which adds junction-to-case thermal resistance compared to a standard TO-220.

Frequently asked questions

What is the reverse recovery time of STTH10R04FP?

The reverse recovery time (trr) is 40 ns.