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STMicroelectronics STTH10R04B-TR — Discrete Semiconductors

STTH10R04B-TR Fast Recovery Diode, 400V 10A, 40ns trr, DPAK

MPNSTTH10R04B-TR
Obsolete

STMicroelectronics STTH10R04B-TR fast recovery diode, 400V 10A, 40ns trr, DPAK surface mount.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STTH10R04B-TR specifications
ParameterValue
MountingSurface Mount
Voltage - DC reverse (Vr)400 V
Voltage - forward (Vf) (Max) @ if1.7 V @ 10 A
Current - reverse leakage @ vr10 µA @ 400 V
Current - average rectified10A
Operating temperature - junction175°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyStandard
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Reverse recovery time40 ns

Product details

The 40 ns trr makes it suitable for high-frequency switching applications like power factor correction (PFC) and freewheeling diodes in SMPS designs, where fast turn-off reduces switching losses. Forward voltage drop is 1.7 V at 10 A, which is typical for a 400 V class fast recovery diode — expect conduction losses around 17 W at full rated current, so thermal management through the DPAK's tab is essential. Junction temperature rating goes to 175°C, which gives headroom for high-temperature environments like enclosed power supplies or motor drives. Reverse leakage is 10 µA at 400 V, a clean number that won't eat into standby budgets.

Frequently asked questions

What is the reverse recovery time of STTH10R04B-TR?

The reverse recovery time (trr) is 40 ns, which qualifies it as a fast recovery diode suitable for switching frequencies above 50 kHz in typical PFC and SMPS topologies.

What are the specifications of STTH10R04B-TR?

Key specifications: 400 V reverse voltage, 10 A average rectified current, 40 ns reverse recovery time, 1.7 V forward voltage at 10 A, 10 µA reverse leakage at 400 V, 175°C maximum junction temperature, DPAK surface-mount package.