STTH1002CB

STMicroelectronics

STMicroelectronics STTH1002CB dual common-cathode fast-recovery diode, 200 V, 8 A per diode, 25 ns trr, 1.1 Vf at 5 A, DPAK surface-mount package.

STMicroelectronics STTH1002CB
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Technical specifications

STTH1002CB specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Voltage - DC reverse (Vr)200 V
Voltage - forward (Vf) (Max) @ if1.1 V @ 5 A
Current - reverse leakage @ vr5 µA @ 200 V
Current - average rectified (Io) (per diode)8A
Operating temperature - junction175°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
TechnologyStandard
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Diode configuration1 Pair Common Cathode
Reverse recovery time25 ns

Technical details

The 25 ns reverse recovery time (trr) is the key parametric — fast enough for continuous-conduction-mode PFC boost stages and output rectification in 100 kHz-class SMPS without excessive switching loss.

8 A per diode — continuous load capability

Each diode in the common-cathode pair handles 8 A average rectified current (Io). The forward voltage is 1.1 V max at 5 A.

ROHS3 compliant. The DPAK (TO-252) surface-mount package is a standard, widely second-sourced footprint — no supply-chain surprise.

Junction temperature and leakage budget

Maximum junction temperature is 175 °C. Reverse leakage at 200 V is only 5 µA — low enough to keep the thermal budget from the high-side diode in a boost PFC stage, where the blocking voltage is sustained for most of the AC cycle.

STTH1002CB
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