STT6N3LLH6

STMicroelectronics · DeepGATE™, STripFET™ VI Series

MOSFET N-CH 30V 6A SOT23-6

STMicroelectronics STT6N3LLH6
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STT6N3LLH6 specifications
Parameter / AttributeSpecification / Value
SeriesDeepGATE™, STripFET™ VI
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C6A (Tc)
Power dissipation1.6W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSOT-23-6
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs25mOhm @ 3A, 10V
Gate charge (Qg) (Max) @ vgs3.6 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds283 pF @ 24 V
STT6N3LLH6
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