STS8N6LF6AG

STMicroelectronics · STripFET™ F6 Series

STMicroelectronics STripFET™ F6 STS8N6LF6AG, N-Channel MOSFET, 60V Vdss, 8A Id, 24mOhm Rds(on) at 10V, AEC-Q101, -55°C to 175°C, SO-8.

STMicroelectronics STS8N6LF6AG
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STS8N6LF6AG specifications
Parameter / AttributeSpecification / Value
SeriesSTripFET™ F6
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C8A (Ta)
Power dissipation3.2W (Ta)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs24mOhm @ 4A, 10V
Gate charge (Qg) (Max) @ vgs27 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1340 pF @ 25 V

Technical details

The AEC-Q101 qualification and -55 °C to 175 °C junction temperature range place it squarely in automotive and industrial power-switching roles — DC-DC converters, motor pre-drives, solenoid drivers, and load switches on 12 V or 48 V board nets. At 8 A the I²R loss hits about 1.5 W, which the SO-8 package can dissipate with adequate copper on the PCB — the 3.2 W derated power at 25 °C ambient gives a usable margin for steady-state loads.

Total gate charge is 27 nC at 10 V. The drive voltage range (4.5 V to 10 V for rated Rds(on)) means the part can be driven from a 5 V logic rail, though the on-resistance will be higher than the 10 V spec. For minimum conduction loss, a 10 V gate supply is recommended.

Automotive qualification and thermal reach

This covers under-hood and engine-bay environments where ambient temperatures can exceed 100 °C and junction spikes during load dump or short-circuit events need headroom.

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