The STS8DN6LF6AG is an automotive-grade dual N-channel MOSFET from ST's STripFET™ F6 series, rated 60V drain-to-source and 8A continuous drain current per channel at 25°C in an 8-SOIC package. AEC-Q101 qualification means this part is screened for automotive reliability standards — suited for under-hood and chassis-domain loads where thermal cycling and vibration are part of the operating environment. The logic-level gate feature (Vgs(th) max 2.5V at 250µA) allows direct PWM drive from 3.3V or 5V microcontroller outputs without a dedicated gate driver IC, saving board space and BOM cost.
Conduction loss and switching budget
Maximum on-resistance is 24mOhm at 4A with 10V gate drive — this sets the conduction loss floor for a 12V automotive solenoid or relay driver. At 4A the I²R loss is under 400mW per channel, leaving thermal headroom in the 3.2W package limit. Gate charge is 27nC at 10V, and input capacitance is 1340pF at 25V drain bias. These numbers define the switching transition time and the drive current needed from the gate source — a 10mA GPIO can switch the gate in a few microseconds, adequate for PWM frequencies up to several kHz. Operating junction temperature range is -55°C to 175°C, covering the full automotive temperature envelope including cold-crank and under-hood soak conditions.