Low-voltage N-channel MOSFET for load switching and DC-DC conversion
The 40 mOhm maximum on-resistance at 4.5 V gate drive makes it a logic-level part — it turns fully on with a 5 V gate signal from a microcontroller or PWM controller.
Total gate charge is 11.5 nC at 4.5 V, which keeps the drive current requirement low — a 100 kHz switching frequency draws roughly 1.15 mA from the gate driver. Input capacitance is 460 pF at 15 V drain-source, a figure that influences the turn-on delay and the driver's peak current capability.
Maximum power dissipation is 2.5 W at case temperature; the SOIC-8's junction-to-ambient thermal resistance means the 6 A rating is achievable only with adequate PCB copper area and airflow — in a typical 25 °C ambient, the practical continuous current is lower than the 6 A Tc rating.