STS5P3LLH6

STMicroelectronics · DeepGATE™, STripFET™ H6 Series

STMicroelectronics DeepGATE™, STripFET™ H6 series, STS5P3LLH6 P-Channel MOSFET, 30 Vdss, 5 A Id, 56 mOhm Rds(on) @ 2.5 A, 10 V, 6 nC Qg, 8-SOIC package, Surface Mount.

STMicroelectronics STS5P3LLH6
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STS5P3LLH6 specifications
Parameter / AttributeSpecification / Value
SeriesDeepGATE™, STripFET™ H6
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C5A (Ta)
Power dissipation2.7W (Ta)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs56mOhm @ 2.5A, 10V
Gate charge (Qg) (Max) @ vgs6 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds639 pF @ 25 V

Technical details

30 V, 5 A P-Channel — load-switch and power-path fit

It comes in an 8-SOIC package and is intended for load switching, battery protection, and power-rail OR-ing in portable and industrial gear where a P-Channel simplifies the high-side drive.

That figure sets the conduction loss floor for a 5 A load: about 1.4 W at max current, which the 2.7 W package dissipation (Ta) can handle with adequate copper area on the PCB.

6 nC gate charge — direct GPIO drive possible

Total gate charge at 4.5 V is 6 nC. That is low enough to switch from a microcontroller GPIO through a series resistor, without a dedicated gate driver IC. For higher frequencies, the gate drive source impedance matters more than the charge number alone.

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