STMicroelectronics · STripFET™ Series
STMicroelectronics STripFET™ series, STS5NF60L, N-Channel MOSFET, 60V Vdss, 5A Id, 55mOhm Rds(on) at 10V, 17nC Qg, 1250pF Ciss, 8-SOIC package, surface mount, ROHS3 compliant.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | STripFET™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 5A (Tc) |
| Power dissipation | 2.5W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 55mOhm @ 2.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 17 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 1250 pF @ 25 V |
On-resistance is 55 mOhm maximum at 2.5 A with a 10 V gate drive, and the gate charge is 17 nC at 5 V.
Housed in an 8-SOIC package (0.154" body width, 3.90 mm), the STS5NF60L is a standard surface-mount footprint. Gate drive voltage range is 4.5 V minimum for the rated on-resistance, 10 V recommended for the lowest Rds(on). The maximum gate-source voltage is ±20 V.
ROHS3 compliant per the current revision.
