600 V N-channel in an 8-SOIC — off-line auxiliary switch
The STS1NK60Z: The 600 V drain-source breakdown voltage targets off-line flyback converters, auxiliary power supplies, and high-voltage DC-DC stages where the primary-side switch sees rectified mains. The 8-SOIC footprint keeps the board area small for a 250 mA-rated device.
15 Ohm Rds(on) and 6.9 nC gate charge — switching loss profile
The 15 Ohm on-resistance at 10 V drive produces a conduction loss of about 0.94 W at 250 mA — within the 2 W package power dissipation limit at case temperature. The 6.9 nC total gate charge at 10 V means the gate driver needs only about 0.7 mA average drive current at 100 kHz switching frequency, keeping the drive stage simple. Input capacitance is 94 pF at 25 V drain-source, which gives a moderate switching speed — the Miller plateau is short enough that a standard gate resistor in the 10-100 Ohm range controls the turn-on slew rate without excessive ringing.
The 2 W power dissipation is derated above 25 °C case temperature per the datasheet curve — at 150 °C junction the allowable dissipation drops to near zero, so the thermal design must keep the case cool under full load.
The SuperMESH™ series remains a standard portfolio line, so supply continuity through distribution is stable.