450V dual N-channel in an 8-SOIC footprint
It belongs to the SuperMESH™ series, a technology optimized for high-voltage switching with low gate charge.
On-resistance and gate drive budget
Maximum on-resistance is 4.5 Ohm at 500 mA drain current with 10V gate drive. The 10 nC total gate charge per channel at 10V means a modest gate driver can switch it — at 100 kHz the average gate drive current per channel is about 1 mA, well within a standard driver's capability. Input capacitance is 160 pF at 25V Vds, which keeps switching losses manageable in flyback or offline auxiliary supply stages.