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STQ2LN60K3-AP

STMicroelectronics · SuperMESH3™ Series

STMicroelectronics SuperMESH3™ STQ2LN60K3-AP, N-Channel MOSFET, 600 V Vdss, 600 mA Id, 4.5 Ohm Rds(on), 12 nC Qg, TO-92-3 through-hole package, 150°C junction temperature.

STMicroelectronics STQ2LN60K3-AP
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MOQ 1 · RoHS · EIA-481 · DAP/DDP · T/T

[ORIGINAL SEALED] [PRE-SHIP HD PHOTOS] [30D WARRANTY · COC] [TRACKED DAP/DDP]

Technical specifications

STQ2LN60K3-AP specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH3™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C600mA (Tc)
Power dissipation2.5W (Tc)
Operating temperature150°C (TJ)
PackageTape & Box (TB); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs4.5Ohm @ 1A, 10V
Gate charge (Qg) (Max) @ vgs12 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds235 pF @ 50 V

Technical details

600 V, 600 mA N-channel — low-power offline switching

The STQ2LN60K3-AP: The TO-92-3 through-hole package (TO-226-3, formed leads) keeps the board footprint small and suits hand-assembly or low-volume production runs.

The 4.5 Ohm Rds(on) at 10 V gate drive sets the conduction loss floor: at 600 mA the I²R loss sits within the 2.5 W maximum power dissipation at the case. Input capacitance is 235 pF at 50 V drain-source, which keeps the switching node capacitance low and helps maintain efficiency in hard-switched topologies.

STQ2LN60K3-AP
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