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STMicroelectronics STQ2LN60K3-AP
STMicroelectronics

STQ2LN60K3-AP N-Channel MOSFET, 600 V, 600 mA, TO-92-3

MPNSTQ2LN60K3-AP
End of Life

STMicroelectronics SuperMESH3™ STQ2LN60K3-AP, N-Channel MOSFET, 600 V Vdss, 600 mA Id, 4.5 Ohm Rds(on), 12 nC Qg, TO-92-3 through-hole package, 150°C junction temperature.

$0.65Ref. price · indicative, final on quote
STQ2LN60K3-AP datasheet
PackagingTO-226-3, TO-92-3 (TO-226AA) Formed Leads
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

STQ2LN60K3-AP Technical Specifications
ParameterValue
SeriesSuperMESH3™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C600mA (Tc)
Power dissipation2.5W (Tc)
Operating temperature150°C (TJ)
PackageTape & Box (TB); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs4.5Ohm @ 1A, 10V
Gate charge (Qg) (Max) @ vgs12 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds235 pF @ 50 V

Product details

600 V, 600 mA N-channel — low-power offline switching

The STQ2LN60K3-AP: The TO-92-3 through-hole package (TO-226-3, formed leads) keeps the board footprint small and suits hand-assembly or low-volume production runs.

The 4.5 Ohm Rds(on) at 10 V gate drive sets the conduction loss floor: at 600 mA the I²R loss sits within the 2.5 W maximum power dissipation at the case. The 12 nC total gate charge at 10 V means a small gate-drive IC or a microcontroller GPIO with a series resistor can switch the MOSFET at tens of kilohertz without excessive drive current — a practical advantage in cost-sensitive auxiliary supplies. Input capacitance is 235 pF at 50 V drain-source, which keeps the switching node capacitance low and helps maintain efficiency in hard-switched topologies.

Frequently asked questions

What is the datasheet for STQ2LN60K3-AP?

Design engineers need complete electrical characteristics and package dimensions to validate fit in their circuit.

Where can I buy STQ2LN60K3-AP and what is the price?

Sourcing buyers need stock availability and cost to fill BOM lines and compare distributors.

What is the equivalent or cross reference for STQ2LN60K3-AP?

Buyers and brokers check alternatives when the part is out of stock or for second-source risk mitigation.

Is STQ2LN60K3-AP still active or obsolete?

Knowing the lifecycle status prevents designing in a soon-to-be-EOL part and affects long-term availability.

What is the lead time for STQ2LN60K3-AP?

Lead time impacts production scheduling; procurement needs this to avoid line-down situations.

What is the pinout of STQ2LN60K3-AP?

Maintenance techs need pinout to verify correct installation when replacing a failed MOSFET.