STQ1NK80ZR-AP

STMicroelectronics · SuperMESH™ Series

STMicroelectronics SuperMESH N-Channel MOSFET, 800 V drain-source, 300 mA continuous drain, 16 Ohm on-resistance at 10 V gate drive, TO-92-3 through-hole package, -55 to 150 °C junction temperature.

STMicroelectronics STQ1NK80ZR-AP
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[IN STOCK] In Stock: 1,001 pcs
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Technical specifications

STQ1NK80ZR-AP specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C300mA (Tc)
Power dissipation3W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Box (TB); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs16Ohm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs7.7 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds160 pF @ 25 V

Technical details

800 V MOSFET in a TO-92 – the auxiliary-supply workhorse

The STQ1NK80ZR-AP: It is built for off-line auxiliary supplies, flyback converters, and bias rails where the primary switching transistor sees the full rectified DC bus.

Rds(on) and gate drive – sizing the conduction loss

The 3 W package limit in the TO-92-3 means thermal management is tight. Gate charge is 7.7 nC at 10 V, and input capacitance is 160 pF at 25 V drain-source – light enough that a simple gate-drive resistor from a PWM controller can switch it without a dedicated driver.

Temperature grade and package – through-hole simplicity

The TO-92-3 through-hole package with formed leads is hand-solderable and fits standard prototyping boards. Maximum gate-source voltage is ±30 V, which gives margin against ringing on the gate node in a hard-switched topology.

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