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STMicroelectronics STQ1NK80ZR-AP
STMicroelectronics

STQ1NK80ZR-AP N-Channel MOSFET, 800 V, 300 mA, TO-92-3

MPNSTQ1NK80ZR-AP
End of Life

STMicroelectronics SuperMESH N-Channel MOSFET, 800 V drain-source, 300 mA continuous drain, 16 Ohm on-resistance at 10 V gate drive, TO-92-3 through-hole package, -55 to 150 °C junction temperature.

$0.88Ref. price · indicative, final on quote
STQ1NK80ZR-AP datasheet
PackagingTO-226-3, TO-92-3 (TO-226AA) Formed Leads
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

STQ1NK80ZR-AP Technical Specifications
ParameterValue
SeriesSuperMESH™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C300mA (Tc)
Power dissipation3W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Box (TB); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs16Ohm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs7.7 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds160 pF @ 25 V

Product details

800 V MOSFET in a TO-92 – the auxiliary-supply workhorse

The STQ1NK80ZR-AP: It is built for off-line auxiliary supplies, flyback converters, and bias rails where the primary switching transistor sees the full rectified DC bus.

Rds(on) and gate drive – sizing the conduction loss

Maximum on-resistance is 16 Ohm at 500 mA drain current with 10 V gate drive. The 3 W package limit in the TO-92-3 means thermal management is tight. Gate charge is 7.7 nC at 10 V, and input capacitance is 160 pF at 25 V drain-source – light enough that a simple gate-drive resistor from a PWM controller can switch it without a dedicated driver.

Temperature grade and package – through-hole simplicity

The TO-92-3 through-hole package with formed leads is hand-solderable and fits standard prototyping boards. Maximum gate-source voltage is ±30 V, which gives margin against ringing on the gate node in a hard-switched topology.

Frequently asked questions

Is STQ1NK80ZR-AP suitable for a flyback converter?

Yes, the 800 V drain-source rating and 300 mA current capability make it a fit for low-power flyback converters in auxiliary supplies, bias rails, and standby power stages.