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STQ1NK60ZR-AP

STMicroelectronics · SuperMESH™ Series

STMicroelectronics SuperMESH N-Channel MOSFET, 600 V drain-source, 300 mA continuous drain, 15 Ohm on-resistance at 10 V gate drive, 6.9 nC gate charge, TO-92-3 through-hole package, -55°C to 150°C junction temperature.

STMicroelectronics STQ1NK60ZR-AP
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MOQ 5 · RoHS · EIA-481 · DAP/DDP · T/T

[ORIGINAL SEALED] [PRE-SHIP HD PHOTOS] [30D WARRANTY · COC] [TRACKED DAP/DDP]

Technical specifications

STQ1NK60ZR-AP specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C300mA (Tc)
Power dissipation3W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Box (TB); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-226-3, TO-92-3 (TO-226AA)
Vgs(th) (Max) @ id4.5V @ 50µA
Rds on (Max) @ id, vgs15Ohm @ 400mA, 10V
Gate charge (Qg) (Max) @ vgs6.9 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds94 pF @ 25 V

Technical details

The STQ1NK60ZR-AP: The 15 Ohm maximum on-resistance at 400 mA drain current with 10 V gate drive sets the conduction loss floor for the design.

Gate charge and drive voltage — switching without a dedicated driver

With a typical gate charge of 6.9 nC at 10 V gate drive, the STQ1NK60ZR-AP can be switched directly from a microcontroller GPIO or a low-current gate driver IC.

The 4.5 V maximum gate threshold at 50 µA drain current ensures the device turns on reliably at cold start.

The part is ROHS3 compliant.

STQ1NK60ZR-AP
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