SiC Schottky — zero-recovery switching for hard-switched power stages
The STPSC8065D is a 650 V, 8 A silicon-carbide Schottky diode from STMicroelectronics, in a TO-220-2 through-hole package. Its SiC technology delivers zero reverse recovery time (trr = 0 ns), which eliminates the switching losses and ringing that plague ultrafast silicon diodes in continuous-current-mode PFC, boost, and flyback converters. The 175°C maximum junction temperature gives thermal headroom for cramped power supplies where ambient heat is unavoidable.
The TO-220-2 (supplier device package TO-220AC) is a standard through-hole power package. The metal tab is the cathode; the anode is the single lead opposite the tab. Mount it with a thermal pad or mica insulator and a screw to the heatsink — the package is designed for that. The 540 pF capacitance at 0 V, 1 MHz is low for a Schottky of this current class, which helps keep switching node capacitance down in high-frequency designs.
It is part of the ECOPACK®2 series, which means the package is halogen-free and meets ST's green-molding standard.