STPSC6H065D

STMicroelectronics

STMicroelectronics STPSC6H065D silicon carbide Schottky diode, 650 V reverse voltage, 6 A average rectified current, zero reverse recovery time, TO-220-2 through-hole package, -40°C to 175°C junction temperature.

STMicroelectronics STPSC6H065D
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Technical specifications

STPSC6H065D specifications
Parameter / AttributeSpecification / Value
Diode typeSilicon Carbide Schottky
MountingThrough Hole
Voltage - DC reverse (Vr)650 V
Voltage - forward (Vf) (Max) @ if1.75 V @ 6 A
Current - reverse leakage @ vr60 µA @ 650 V
Current - average rectified6A
Operating temperature - junction-40°C~175°C
SpeedNo Recovery Time > 500mA (Io)
PackageTube
CaseTO-220-2
Capacitance @ vr,300pF @ 0V, 1MHz
Reverse recovery time0 ns

Technical details

SiC Schottky — zero-recovery switching for PFC and flyback

The STPSC6H065D is a 650 V, 6 A silicon carbide Schottky diode from STMicroelectronics, housed in a TO-220-2 through-hole package.

With a listed reverse recovery time of 0 ns, this diode contributes no recovery charge to the switching node. In a continuous-conduction-mode PFC, that directly reduces the MOSFET turn-on loss and suppresses the ringing that otherwise demands a snubber. The 300 pF capacitance at 0 V, 1 MHz is the only parasitic the driver sees — no stored minority carriers to sweep out. The 1.75 V forward drop at 6 A and 175 °C maximum junction temperature give the thermal designer a predictable loss budget. At full rated current, conduction loss is about 10.5 W; the TO-220 tab to a heatsink keeps the junction below the 175 °C ceiling in a forced-air enclosure.

Package, mounting, and compliance

The TO-220-2 (supplier device package TO-220AC) is a through-hole package with a single mounting hole for a heatsink. The anode is the left pin, cathode the centre tab — standard for this footprint.

STPSC6H065D
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