STPSC4H065DLF

STMicroelectronics

STMicroelectronics STPSC4H065DLF, Silicon Carbide Schottky Diode, 650 V, 4 A, Zero Reverse Recovery Time, Surface Mount, 8-PowerVDFN PowerFlat HV, -40°C to 175°C Junction.

STMicroelectronics STPSC4H065DLF
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[IN STOCK] In Stock: 50 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STPSC4H065DLF specifications
Parameter / AttributeSpecification / Value
SeriesECOPACK®2
Diode typeSilicon Carbide Schottky
MountingSurface Mount
Voltage - DC reverse (Vr)650 V
Voltage - forward (Vf) (Max) @ if1.55 V @ 4 A
Current - reverse leakage @ vr40 µA @ 650 V
Current - average rectified4A
Operating temperature - junction-40°C~175°C
SpeedNo Recovery Time > 500mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
Case8-PowerVDFN
Capacitance @ vr,245pF @ 0V, 1MHz
Reverse recovery time0 ns

Technical details

650 V / 4 A SiC Schottky — Zero trr in a PowerFlat package

The STPSC4H065DLF is a silicon carbide Schottky diode from STMicroelectronics, rated for 650 V reverse voltage and 4 A average rectified current.

What the zero trr means for your BOM

Because the reverse recovery time is 0 ns, you can run this diode at higher frequencies without the thermal penalty of a silicon part. The forward voltage drop is 1.55 V at 4 A — higher than a comparable silicon Schottky, but the switching loss saving more than compensates above about 50 kHz. The 245 pF capacitance at 0 V is typical for a 4 A SiC die; it does not cause the ringing you would see from a silicon diode's reverse recovery snap-off.

It comes in an 8-PowerVDFN PowerFlat HV package — a surface-mount 8x8 mm exposed-paddle design.

It is part of the ECOPACK®2 series, meaning it is RoHS compliant and halogen-free per ST's material declaration.

STPSC4H065DLF
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