STPSC10TH13TI

STMicroelectronics

STMicroelectronics STPSC10TH13TI SiC Schottky diode array, 650 V DC reverse, 10 A average rectified per diode, zero reverse recovery time, 1.75 V forward drop at 10 A, TO-220AB insulated through-hole package.

STMicroelectronics STPSC10TH13TI
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Technical specifications

STPSC10TH13TI specifications
Parameter / AttributeSpecification / Value
MountingThrough Hole
Voltage - DC reverse (Vr)650 V
Voltage - forward (Vf) (Max) @ if1.75 V @ 10 A
Current - reverse leakage @ vr100 µA @ 650 V
Current - average rectified (Io) (per diode)10A
Operating temperature - junction150°C (Max)
SpeedNo Recovery Time > 500mA (Io)
PackageTube
TechnologySiC (Silicon Carbide) Schottky
CaseTO-220-3
Diode configuration1 Pair Series Connection
Reverse recovery time0 ns

Technical details

The STPSC10TH13TI is a 650 V, 10 A SiC Schottky diode array from STMicroelectronics, configured as a 1-pair series connection in a TO-220AB insulated package.

650 V blocking, 10 A forward — headroom for PFC and inverter legs

Each diode in the series pair is rated for 650 V DC reverse and 10 A average rectified current, with a maximum forward voltage of 1.75 V at 10 A. The series configuration lets the array serve as a center-tap leg in a boost PFC or as two independent high-voltage diodes sharing one heatsink footprint. Reverse leakage is 100 µA at the 650 V rated voltage — typical for SiC, but worth noting that leakage rises with junction temperature, so the 150°C maximum junction rating sets the thermal design boundary.

Through-hole TO-220AB insulated — mounting and isolation

The TO-220-3 insulated package provides electrical isolation between the tab and the heatsink — no separate insulating pad or washer needed for the mounting screw. The through-hole leads suit wave-solder or hand-solder assembly.

STPSC10TH13TI
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