STPS60L45CW

STMicroelectronics

STMicroelectronics STPS60L45CW, Schottky diode array, 1 pair common cathode, 45 V DC reverse, 30 A average rectified per diode, 550 mV forward voltage at 30 A, Fast Recovery ≤ 500 ns, TO-247-3 through-hole package, ROHS3 compliant.

STMicroelectronics STPS60L45CW
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Technical specifications

STPS60L45CW specifications
Parameter / AttributeSpecification / Value
MountingThrough Hole
Voltage - DC reverse (Vr)45 V
Voltage - forward (Vf) (Max) @ if550 mV @ 30 A
Current - reverse leakage @ vr1.5 mA @ 45 V
Current - average rectified (Io) (per diode)30A
Operating temperature - junction150°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
TechnologySchottky
CaseTO-247-3
Diode configuration1 Pair Common Cathode

Technical details

Dual 30 A Schottky in a common-cathode TO-247-3

The TO-247-3 through-hole package handles the thermal load from 60 A total forward current in a single bolt-down footprint. Forward voltage is specified at 550 mV maximum at 30 A — low enough to keep conduction loss under 16.5 W per diode at full rated current, which drives the heatsink requirement for continuous operation. The fast-recovery characteristic (≤ 500 ns, > 200 mA) suits the diode for switching frequencies in PFC stages and output rectification where Schottky's low reverse-recovery charge reduces switching loss.

45 V reverse rating and leakage at temperature

Maximum reverse voltage is 45 V, and reverse leakage at that voltage is 1.5 mA — typical for a 45 V Schottky at 25 °C junction; leakage doubles with every 10 °C rise, so the junction temperature budget must account for the self-heating from both forward and reverse losses. Maximum junction temperature is 150 °C, which sets the derating curve for the average forward current. At high ambient temperatures the 30 A per-diode rating must be reduced per the datasheet thermal resistance figure.

Active production, ROHS3, sourced to order

It is ROHS3 compliant, suitable for designs requiring lead-free assembly.

STPS60L45CW
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