STPS6045CW

STMicroelectronics

STMicroelectronics STPS6045CW, Schottky diode array, 45 V DC reverse voltage, 30 A average rectified current per diode, 630 mV forward voltage at 30 A, TO-247-3 through-hole package, active production.

STMicroelectronics STPS6045CW
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Technical specifications

STPS6045CW specifications
Parameter / AttributeSpecification / Value
MountingThrough Hole
Voltage - DC reverse (Vr)45 V
Voltage - forward (Vf) (Max) @ if630 mV @ 30 A
Current - reverse leakage @ vr500 µA @ 45 V
Current - average rectified (Io) (per diode)30A
Operating temperature - junction175°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
TechnologySchottky
CaseTO-247-3
Diode configuration1 Pair Common Cathode

Technical details

630 mV Vf at 30 A — conduction loss anchor

The 630 mV maximum forward voltage at 30 A per diode sets the conduction loss floor for the pair — at 60 A total the combined Vf drop is about 1.26 V, which directly drives the heatsink requirement in a 175°C junction temperature design.

Common-cathode topology — board-space trade

Two 30 A Schottky diodes share the cathode in a single TO-247-3, giving a 60 A total current capability in one through-hole footprint. This saves PCB area and assembly cost versus two separate TO-220 devices, but the common cathode means the pair cannot be used as independent rectifiers — they share the output rail in a center-tap or boost-stage configuration.

Reverse leakage at temperature

Reverse leakage is specified at 500 µA at 45 V. Schottky leakage doubles with every 10–15°C rise above 25°C, so at 125°C junction the leakage current can dominate the thermal budget in light-load or standby conditions. The 175°C maximum junction rating gives headroom for high-surge environments, but the designer should derate the reverse voltage in continuous high-temperature operation.

STPS6045CW
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