STPS41H100CG

STMicroelectronics

STMicroelectronics STPS41H100CG, Schottky diode array, 1 pair common cathode, 100 V DC reverse voltage, 20 A average rectified per diode, 800 mV forward drop at 20 A, 175°C junction, D2PAK (TO-263AB), surface mount.

STMicroelectronics STPS41H100CG
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Technical specifications

STPS41H100CG specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Voltage - DC reverse (Vr)100 V
Voltage - forward (Vf) (Max) @ if800 mV @ 20 A
Current - reverse leakage @ vr10 µA @ 100 V
Current - average rectified (Io) (per diode)20A
Operating temperature - junction175°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
TechnologySchottky
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Diode configuration1 Pair Common Cathode

Technical details

100 V, 20 A per diode — the output-stage workhorse

The STPS41H100CG is a dual Schottky rectifier from STMicroelectronics, pairing two 100 V, 20 A diodes in a common-cathode configuration inside a single D2PAK (TO-263AB) surface-mount package. The pair delivers 40 A total average rectified current, sized for the output stage of switch-mode power supplies, DC-DC converters, and OR-ing diodes in redundant power architectures.

Forward drop and the thermal budget at 20 A

Maximum forward voltage is 800 mV at 20 A per diode. The 10 µA reverse leakage at 100 V is a room-temperature figure — expect it to rise exponentially with junction temperature, which matters for OR-ing diodes that sit reverse-biased for long periods.

Fast recovery — 500 ns ceiling

Rated fast recovery ≤ 500 ns at > 200 mA. For a Schottky this is a wide upper bound — the intrinsic majority-carrier switching is faster than 500 ns, but the spec covers the datasheet test condition. In practice the reverse-recovery charge is negligible compared to a pn-junction diode, so the STPS41H100CG suits continuous-conduction-mode PFC stages and high-frequency rectifiers where stored charge would cause ringing.

STPS41H100CG
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