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STMicroelectronics STPS30H100CT — Discrete Semiconductors

STPS30H100CT Schottky Diode Array, 100V 15A TO-220

MPNSTPS30H100CT
Active

STMicroelectronics STPS30H100CT, dual Schottky rectifier, 100 V reverse voltage, 15 A per diode average rectified current, 800 mV forward drop at 15 A, 175 °C junction temperature, TO-220-3 through-hole package.

$1.5700Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STPS30H100CT specifications
ParameterValue
Diode typeSchottky
MountingThrough Hole
Voltage - DC reverse (Vr)100 V
Voltage - forward (Vf) (Max) @ if800 mV @ 15 A
Current - reverse leakage @ vr5 µA @ 100 V
Current - average rectified (Io) (per diode)15A
Operating temperature - junction-40°C~175°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
CaseTO-220-3
Diode configuration1 Pair Common Cathode

Product details

15 A per diode — common-cathode pair in a TO-220

The STPS30H100CT is a dual Schottky rectifier from STMicroelectronics, configured as a common-cathode pair with each diode rated for 15 A average rectified current at a 100 V reverse voltage.

175°C junction — headroom for tight thermal loops

The reverse leakage at 100 V is 5 µA at 25°C, but at 175°C junction the leakage climbs significantly — account for the increase in the thermal runaway margin when sizing the heatsink.

TO-220-3 — through-hole mounting for power dissipation

The TO-220-3 through-hole package with the common-cathode tab allows direct heatsink attachment via the mounting hole. The metal tab is the cathode connection for both diodes, so the heatsink is at cathode potential — account for this in the assembly insulation scheme if the heatsink is chassis-grounded. The 0.50 mm pitch of the leads is standard for TO-220; the PCB footprint matches the industry-standard three-lead layout with the tab pad sized for solder wetting and thermal transfer.

Frequently asked questions

What is the STPS30H100CT's listed speed?

The diode is classified as Fast Recovery with a recovery time of 500 ns or less at forward currents above 200 mA. This is typical for a Schottky barrier — the speed is set by the junction capacitance, not a stored charge recovery mechanism.