STPS20M60D

STMicroelectronics

STMicroelectronics STPS20M60D Schottky rectifier, 20 A average rectified current, 60 V reverse voltage, 580 mV forward drop at 20 A, TO-220AC through-hole package, fast recovery < 500 ns.

STMicroelectronics STPS20M60D
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Technical specifications

STPS20M60D specifications
Parameter / AttributeSpecification / Value
Diode typeSchottky
MountingThrough Hole
Voltage - DC reverse (Vr)60 V
Voltage - forward (Vf) (Max) @ if580 mV @ 20 A
Current - reverse leakage @ vr125 µA @ 60 V
Current - average rectified20A
Operating temperature - junction150°C(Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
CaseTO-220-2

Technical details

20 A Schottky for 60 V rails — conduction loss and thermal budget

The STMicroelectronics STPS20M60D is a 20 A, 60 V Schottky rectifier in a TO-220AC through-hole package.

580 mV Vf at 20 A — what it buys the power stage

At 20 A forward current the STPS20M60D drops 580 mV, which translates to 11.6 W of conduction loss at that current. That figure drives the heatsink selection — a TO-220 bolted to a modest finned extruded aluminium heatsink handles it in still air, but the junction temperature ceiling of 150 °C (max) sets the derating curve. The 125 µA reverse leakage at 60 V is a secondary thermal contributor; leakage doubles roughly every 10 °C above 25 °C junction, so the thermal design should keep Tj below 125 °C for margin.

Fast recovery — switching speed matters here

The STPS20M60D is rated as a fast recovery Schottky with recovery time under 500 ns at forward currents above 200 mA. That places it above standard 50/60 Hz rectifier diodes but below ultrafast epitaxial types. For a 100 kHz PFC boost or a 50–100 kHz forward converter secondary, the recovery charge is low enough that the MOSFET turn-on loss from diode reverse recovery stays manageable. At higher frequencies the switching loss in the diode itself starts to dominate the thermal budget.

STPS20M60D
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