STPS20120CT

STMicroelectronics

STMicroelectronics STPS20120CT Schottky diode array, 120V reverse voltage, 10A average rectified current per diode, 920mV forward voltage at 10A, 1 pair common cathode, TO-220-3 through-hole package.

STMicroelectronics STPS20120CT
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Technical specifications

STPS20120CT specifications
Parameter / AttributeSpecification / Value
MountingThrough Hole
Voltage - DC reverse (Vr)120 V
Voltage - forward (Vf) (Max) @ if920 mV @ 10 A
Current - reverse leakage @ vr10 µA @ 120 V
Current - average rectified (Io) (per diode)10A
Operating temperature - junction175°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
TechnologySchottky
CaseTO-220-3
Diode configuration1 Pair Common Cathode

Technical details

ROHS3 compliant.

Through-hole TO-220 — mounting and thermal interface

The TO-220-3 through-hole package is the standard for board-level power rectification. The metal tab is the common-cathode node; the two anode pins are the individual diode inputs. Heatsink mounting requires a thermal pad or grease — the junction-to-case thermal resistance is not listed here, but the 175°C Tj max and 10 A per leg define the derating curve for forced-air or convection-cooled designs.

Fast recovery speed — Schottky switching edge

Listed as Fast Recovery (≤500 ns, >200 mA Io), typical for a Schottky — the majority-carrier structure eliminates stored charge, so recovery time is negligible compared to a pn-junction diode at this voltage class.

STPS20120CT
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