STMicroelectronics STripFET™ STP90NF03L, N-Channel MOSFET, 30V Vdss, 90A Id, 6.5mOhm Rds(on) @ 10V, 47nC Qg, TO-220-3, -65°C~175°C junction.
| Parameter | Value |
|---|---|
| Series | STripFET™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 5V, 10V |
| Current - continuous drain (Id) @ 25°C | 90A (Tc) |
| Power dissipation | 150W (Tc) |
| Operating temperature | -65°C~175°C(TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 6.5mOhm @ 45A, 10V |
| Gate charge (Qg) (Max) @ vgs | 47 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 2700 pF @ 25 V |
The STP90NF03L is a 30 V, 90 A N-channel power MOSFET from STMicroelectronics' STripFET™ series, built on a planar stripe technology that balances low on-resistance with fast switching.
Gate charge is 47 nC at 5 V; input capacitance is 2700 pF at 25 V. Drive voltage is rated for 5 V or 10 V logic-level drive.
For existing production builds, the part remains available through the independent distribution channel, but new designs should select a current-production alternative.
STP90NF03L is NRND and may become obsolete, so buyers need a drop-in or functional equivalent for new designs.
NRND status signals end-of-life, so engineers and buyers must assess longevity and plan for redesign.
Designers need exact electrical and thermal parameters to ensure fit in their circuit.
Sourcing buyers need immediate availability to fulfill BOM requirements without delays.
Cost impacts BOM budgeting and supplier selection.
Cross-referencing is essential for finding alternatives when original part is NRND or unavailable.