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STMicroelectronics STP80NF10FP — Discrete Semiconductors

STP80NF10FP N-Channel MOSFET, 100V 38A TO-220FP

MPNSTP80NF10FP
Active

STMicroelectronics STripFET™ II N-Channel MOSFET, STP80NF10FP, 100V Vdss, 38A Id, 15mOhm Rds(on) at 40A, 10V drive, TO-220-3 Full Pack, -55 to 175°C.

$3.1700Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesSTripFET™ II
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STP80NF10FP specifications
ParameterValue
SeriesSTripFET™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C38A (Tc)
Power dissipation45W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs15mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs189 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4300 pF @ 25 V

Product details

189 nC gate charge — what it costs to switch fast

Total gate charge is 189 nC at 10 V. For a 100 kHz switching frequency, the gate-driver must supply about 18.9 mA average drive current — well within a standard MOSFET driver's capability, but the peak current during the Miller plateau needs to be sized for the driver's output impedance. The 4300 pF input capacitance at 25 V drain-source confirms the gate is a moderate load; a 1 A gate-driver IC will charge it in roughly 190 ns.

Full-pack TO-220FP — no heatsink isolation needed

The TO-220FP full-pack package has the metal tab fully encapsulated — no exposed drain pad. Mounting torque on the screw should follow the package drawing — over-torque cracks the plastic tab.

Frequently asked questions

Can the STP80NF10FP be replaced by the IRF3205?

Both are N-channel MOSFETs in the 55-100 V range, but they are not pin-compatible drop-in replacements. The IRF3205 is a 55 V device in a standard TO-220, while the STP80NF10FP is 100 V in a TO-220FP full-pack. The gate charge, Rds(on), and package thermal characteristics differ — a full re-characterisation of the gate drive and thermal design would be needed before substituting.